Browsing by Author "Kumar, J."

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    Strain tunable Schottky barriers and tunneling characteristics of borophene/MX2 van der Waals heterostructures
    (Elsevier, 2020) Katoch, N; Kumar, A; Sharma, R; Ahluwalia, P.K; Kumar, J.
    Based on first-principle calculations, we report the strain induced changes in electronic properties and their influence on current-voltage (I?V) characteristics of the borophene (?12)/MX2 (M = Mo, W and X = S, Se) vdW heterostructures. The results reveal that the intrinsic electronic nature of borophene and MX2 is retained because of weak van der Waals interactions. However, p-type Schottky contacts are formed at the interface of the heterostructures. Application of the in-plane tensile and compression strains is effective in tuning the Schottky contacts and controlling the SBHs. Also, at the vertical pressure values of 5.46 and 5.25 GPa for ?12/MoS2 and ?12/WS2 respectively, Schottky contact changes from p-type to n-type. The I?V characteristics exhibit an ohmic behavior at low bias ±0.1 v and noticeable NDR on changing positive (negative) biases. Such strain tunable Schottky barriers may be influential in ?12/MX2 based high-performance nano- and optoelectronic devices. - 2020 Elsevier B.V.
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    Tuning of Schottky barriers in borophene/MoS2 van der Waals heterostructure by external electric field
    (American Institute of Physics, 2019) Katoch, N; Thakur, R; Kumar, Ashok; Ahluwalia, P.K; Kumar, J.
    A first principle study of structural properties, band bending and tuning of schottky barrier height (SBH) of borophene/MoS2 Van der Waals heterostructure has been carried out within the framework of density functional theory (DFT). Studied binding energy shows that the interaction between borophene and MoS2 is weak. Consequently, both borophene and MoS2 are preserving their electronic nature in heterostructure. We have calculated the band bending 0.15 eV for borophene and -0.52 eV for MoS2 in borophene/MoS2 heterostructure which shows that the metal-semiconductor contact is in between p-type borophene and n-type MoS2. On the application of external electric field, tuning of schottky barriers has been achieved and metal-semiconductor contact gets transformed into ohmic contact which is important for the fast performance of electronic devices. © 2019 Author(s).