Physics - Research Publications

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    Stability, optoelectronic and thermal properties of two-dimensional Janus ?-Te2S
    (IOP Publishing Ltd, 2022-02-14T00:00:00) Singh, Jaspreet; Jakhar, Mukesh; Kumar, Ashok
    Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janus ?-Te2S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap ( 1/41.5 eV), ultrahigh carrier mobility ( 1/4103 cm2 V-1 s-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference ( "V = 1.07 eV) on two surfaces of Janus ?-Te2S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janus ?-Te2S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e. ?-Te2S/T-PdS2, ?-Te2S/BP and ?-Te2S/H-MoS2 are 1/421%, 1/419% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m-1 K-1) of Janus ?-Te2S makes it a promising material for the fabrication of next-generation thermal energy conversion devices. � 2022 IOP Publishing Ltd.
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    Pressure and electric field tuning of Schottky contacts in PdSe2/ZT-MoSe2 van der Waals heterostructure
    (Institute of Physics Publishing, 2020) Jakhar, M; Singh, J; Kumar, A; Tankeshwar, K.
    A two-dimensional van der Waals (vdW) heterostructure (PdSe2/ZT-MoSe2) has been investigated through vdW corrected density functional theory. ZT-MoSe2 acts as a Dirac material with an anisotropic Dirac cone and variable Fermi velocity (0.52-1.91 105 ms-1). The intrinsic Schottky barrier height can be effectively tuned by applying external pressure and an electric field to the heterostructure. The p-type Schottky barrier transforms into a p-type ohmic contact at pressure P ? 16 GPa. A positive electric field induces p-type ohmic contact while a negative electric field results in the transition from p-type Schottky contact to n-type Schottky contact, and finally to n-type ohmic contact at the higher values of the field. Moreover, the external positive (negative) electric field induces n-type (p-type) doping of ZT-MoSe2 in the heterostructure and remarkably controls the charge carrier concentration. Our results demonstrate that controlling the external pressure and electric field in a PdSe2/ZT-MoSe2 heterostructure can result in an unprecedented opportunity for the design of high-performance nanodevices. � 2020 IOP Publishing Ltd.