Department Of Physics
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Item Janus ?-PdXY (X/Y = S, Se, Te) materials with high anisotropic thermoelectric performance(Royal Society of Chemistry, 2023-02-21T00:00:00) Jakhar, Mukesh; Sharma, Raman; Kumar, AshokTwo-dimensional (2D) materials have garnered considerable attention as emerging thermoelectric (TE) materials owing to their unique density of states (DOS) near the Fermi level. We investigate the TE performance of Janus ?-PdXY (X/Y = S, Se, Te) monolayer materials as a function of carrier concentration and temperature in the mid-range from 300 to 800 K by combining density functional theory (DFT) and semi-classical Boltzmann transport theory. The phonon dispersion spectra and AIMD simulations confirm their thermal and dynamic stability. The transport calculation results reveal the highly anisotropic TE performance of both n and p-type Janus ?-PdXY monolayers. Meanwhile, the coexistence of low phonon group velocity and a converged scattering rate leads to a lower lattice thermal conductivity (Kl) of 0.80 W mK?1, 0.94 W mK?1, and 0.77 W mK?1 along the y-direction for these Janus materials, while the high TE power factor is attributed to the high Seebeck coefficient (S) and electrical conductivity, which are due to the degenerate top valence bands of these Janus monolayers. The combination of lower Kl and a high-power factor at 300 K (800 K) leads to an optimal figure of merit (ZT) of 0.68 (2.21), 0.86 (4.09) and 0.68 (3.63) for p-type Janus PdSSe, PdSeTe and PdSTe monolayers, respectively. To evaluate rational electron transport properties, the effects of acoustic phonon scattering (?ac), impurity scattering (?imp), and polarized phonon scattering (?polar) are included in the temperature-dependent electron relaxation time. These findings indicated that the Janus ?-PdXY monolayers are promising candidates for TE conversion devices. � 2023 The Royal Society of Chemistry.Item First principles study of 2D ring-Te and its electrical contact with a topological Dirac semimetal(Royal Society of Chemistry, 2023-02-10T00:00:00) Singh, Jaspreet; Kumar, AshokIn recent years, researchers have manifested their interest in two-dimensional (2D) mono-elemental materials of group-VI elements because of their excellent optoelectronic, photovoltaic and thermoelectric properties. Despite the intensive recent research efforts, there is still a possibility of novel 2D allotropes of these elements due to their multivalency nature. Here, we have predicted a novel 2D allotrope of tellurium (ring-Te) using density functional theory. Its stability is confirmed by phonon and ab initio molecular dynamics simulations. Ring-Te has an indirect band gap of 0.69 eV (1.16 eV) at the PBE (HSE06) level of theories and undergoes an indirect-direct band gap transition under tensile strain. The higher carrier mobility of holes (?103 cm2 V?1 s?1), good UV-visible light absorption ability and low exciton binding (?0.35 eV) of ring-Te give rise to its potential applications in optoelectronic devices. Furthermore, the electrical contact of ring-Te with a topological Dirac semimetal (sq-Te) under the influence of an electric field shows that the Schottky barriers and contact types can undergo transition from p-type to n-type Schottky contact and then to ohmic contact at a higher electric field. Our study provides an insight into the physics of designing high-performance electrical coupled devices composed of 2D semiconductors and topological semimetals. � 2023 The Royal Society of Chemistry.Item Photocatalytic properties of anisotropic ?-PtX2 (X = S, Se) and Janus ?-PtSSe monolayers(Royal Society of Chemistry, 2022-09-01T00:00:00) Jamdagni, Pooja; Kumar, Ashok; Srivastava, Sunita; Pandey, Ravindra; Tankeshwar, K.The highly efficient photocatalytic water splitting process to produce clean energy requires novel semiconductor materials to achieve a high solar-to-hydrogen energy conversion efficiency. Herein, the photocatalytic properties of anisotropic ?-PtX2 (X = S, Se) and Janus ?-PtSSe monolayers were investigated based on the density functional theory. The small cleavage energy for ?-PtS2 (0.44 J m?2) and ?-PtSe2 (0.40 J m?2) endorses the possibility of mechanical exfoliation from their respective layered bulk materials. The calculated results revealed that the ?-PtX2 monolayers have an appropriate bandgap (?1.8-2.6 eV) enclosing the water redox potential, light absorption coefficient (?104 cm?1), and exciton binding energy (?0.5-0.7 eV), which facilitates excellent visible-light-driven photocatalytic performance. Remarkably, the inherent structural anisotropy leads to an anisotropic high carrier mobility (up to ?5 � 103 cm2 V?1 S?1), leading to a fast transport of photogenerated carriers. Notably, the required small external potential to realize hydrogen evolution reaction and oxygen evolution reaction processes with an excellent solar-to-hydrogen energy conversion efficiency for ?-PtSe2 (?16%) and ?-PtSSe (?18%) makes them promising candidates for solar water splitting applications. � 2022 The Royal Society of Chemistry.Item Mechanical, optical and thermoelectric properties of Janus BiTeCl monolayer(Elsevier Ltd, 2022-04-29T00:00:00) Chauhan, Poonam; Singh, Jaspreet; Kumar, AshokWe report mechanical, optical and thermoelectric properties of recently fabricated Janus BiTeCl monolayer using density functional and semi-classical Boltzmann transport theory. Janus BiTeCl monolayer exhibits a direct bandgap, high carrier mobility (?103 cm2V?1s?1) and high optical absorption in the UV�visible region. The mechanical behavior of the Janus BiTeCl monolayer is nearly isotropic having an ideal tensile strength ?15 GPa. The higher value of the Gruneisen parameter (?), a low value of phonon group velocity (vg), and very little phonon scattering time (?p) lead to low lattice thermal conductivity (1.46 W/mK) of Janus BiTeCl monolayer. The combined effect of thermal conductivity and electronic transport coefficients of Janus BiTeCl monolayer results in the figure of merit (ZT) in the range of 0.43�0.75 at 300�500 K. Our results suggest Janus BiTeCl monolayer be a potential candidate for optoelectronic and moderate temperature thermoelectric applications. � 2022Item Stability and carrier transport properties of phosphorene-based polymorphic nanoribbons(Institute of Physics Publishing, 2018) Kaur, Sumandeep; Kumar, Ashok; Srivastava, Sunita; Pandey, Ravindra; Tankeshwar, K.Few-layer black phosphorene has recently attracted significant interest in the scientific community. In this paper, we consider several polymorphs of phosphorene nanoribbons (PNRs) and employ deformation potential theory within the effective mass approximation, together with density functional theory, to investigate their structural, mechanical and electronic properties. The results show that the stability of a PNR strongly depends on the direction along which it can be cut from its 2D counterpart. PNRs also exhibit a wide range of line stiffnesses ranging from 6 ?1010 eV m-1 to 18 ?1011 eV m-1, which has little dependence on the edge passivation. Likewise, the calculated electronic properties of PNRs show them to be either a narrow-gap semiconductor (E g < 1 eV) or a wide-gap semiconductor (E g > 1 eV). The carrier mobility of PNRs is found to be comparable to that of black phosphorene. Some of the PNRs show an n-type (p-type) semiconducting character owing to their higher electron (hole) mobility. Passivation of the edges leads to n-type ? p-type transition in many of the PNRs considered. The predicted novel characteristics of PNRs, with a wide range of mechanical and electronic properties, make them potentially suitable for use in nanoscale devices. ? 2018 IOP Publishing Ltd.Item Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN(Institute of Physics Publishing, 2017) Guo, Qing; Wang, Gaoxue; Kumar, Ashok; Pandey, RavindraVan der Waals structures based on two-dimensional materials have been considered as promising structures for novel nanoscale electronic devices. Two-dimensional SnO films which display intrinsic p-type semiconducting properties were fabricated recently. In this paper, we consider vertically stacked heterostructures consisting of a SnO monolayer with graphene or a BN monolayer to investigate their stability, electronic and transport properties using density functional theory. The calculated results find that the properties of the constituent monolayers are retained in these SnO-based heterostructures, and a p-type Schottky barrier is formed in the SnO/graphene heterostructure. Additionally, the Schottky barrier can be effectively controlled with an external electric field, which is useful characteristic for the van der Waals heterostructure-based electronic devices. In the SnO/BN heterostructure, the electronic properties of SnO are least affected by the insulating monolayer suggesting that the BN monolayer would be an ideal substrate for SnO-based nanoscale devices. ? 2017 IOP Publishing Ltd.Item Alloyed monolayers of Cu, Ag, Au and Pt in hexagonal phase: A comprehensive first principles study(Elsevier Ltd, 2018) Kapoor, Pooja; Kumar, Arun; Sharma, Munish; Kumar, Jagdish; Kumar, Ashok; Ahluwalia, P. K.We present density functional theory (DFT) based comprehensive study of two-dimensional (2D) alloyed monolayers of noble metals (AgCu, AgPt, AgAu, AuCu, AuPt and CuPt) in hexagonal phase within numerical atomic orbitals and plane wave basis sets methods. The monolayers considered exhibit positive phonon frequencies suggesting them to be dynamically stable. The Pt containing alloyed monolayers have superior structural stability (binding energy and tensile strength) and exhibit metallic and ferromagnetic character amongst all the alloyed monolayers. Interestingly, alloying of Au monolayer with Cu and Ag show semiconducting behavior whereas alloyed AgCu monolayer posseses Dirac-cone like features at high symmetry points. These distinct features in electronic structures of alloyed 2D monolayers have been captured in STM like set up. An anisotropic behavior has been observed in dielectric spectra for all the considered structures. Tunneling characteristics show NDR region for Pt containing alloyed monolayers. The considered alloyed monolayers may potentially be useful as a building blocks for the applications in nano- and opto-electronics. ? 2017 Elsevier B.V.Item Electronic properties and STM images of vacancy clusters and chains in functionalized silicene and germanene(Elsevier B.V., 2017) Jamdagni, Pooja; Kumar, Ashok; Sharma, Munish; Thakur, Anil; Ahluwalia, P. K.Electronic properties and STM topographical images of X (=F, H, O) functionalized silicene and germanene have been investigated by introducing various kind of vacancy clusters and chain patterns in monolayers within density functional theory (DFT) framework. The relative ease of formation of vacancy clusters and chain patterns is found to be energetically most favorable in hydrogenated silicene and germanene. F- and H-functionalized silicene and germanene are direct bandgap semiconducting with bandgap ranging between 0.1?1.9?eV, while O-functionalized monolayers are metallic in nature. By introducing various vacancy clusters and chain patterns in both silicene and germanene, the electronic and magnetic properties get modified in significant manner e.g. F- and H-functionalized silicene and germanene with hexagonal and rectangle vacancy clusters are non-magnetic semiconductors with modified bandgap values while pentagonal and triangle vacancy clusters induce metallicity and magnetic character in monolayers; hexagonal vacancy chain patterns induce direct-to-indirect gap transition while zigzag vacancy chain patterns retain direct bandgap nature of monolayers. Calculated STM topographical images show distinctly different characteristics for various type of vacancy clusters and chain patterns which may be used as electronic fingerprints to identify various vacancy patterns in silicene and germanene created during the process of functionalization. ? 2016 Elsevier B.V.Item Ultra-narrow blue phosphorene nanoribbons for tunable optoelectronics(Royal Society of Chemistry, 2017) Swaroop, Ram; Ahluwalia, P. K.; Tankeshwar, K.; Kumar, AshokWe report optoelectronic properties of ultra-narrow blue phosphorene nanoribbons (BPNRs) within the state-of-the-art density functional theory framework. The positive but small value of formation energy (?0.1 eV per atom) indicates the relative ease of the formation of BPNRs from their two-dimensional (2D) counterpart. The oscillatory behaviour of the electronic band gap of bare BPNRs with increasing width is attributed to the reconstruction of edge atoms. The static dielectric constant of BPNRs depends on the width and applied strain which in turn shows consistency with the Penn's model expression for semiconductors. Bare BPNRs exhibit both ? and ? + ? plasmonic structures while passivated ones possess only a ? + ? plasmonic structure that get blue-shifted (as large as ?3 eV) on increasing the width of the BPNRs which makes electron energy loss spectroscopy useful for identifying the width of BPNRs in real experimental situations. The mechanical strain induces a small red shift in, which is attributed to the modification in electronic band dispersion due to a different superposition of atomic orbitals on the application of applied strain. These tunable electronic and dielectric properties of BPNRs mean they may find applications in optoelectronic devices based on blue phosphorene. ? The Royal Society of Chemistry.Item Electronic, Mechanical, and Dielectric Properties of Two-Dimensional Atomic Layers of Noble Metals(Springer New York LLC, 2017) Kapoor, Pooja; Kumar, Jagdish; Kumar, Arun; Kumar, Ashok; Ahluwalia, P. K.We present density functional theory-based electronic, mechanical, and dielectric properties of monolayers and bilayers of noble metals (Au, Ag, Cu, and Pt) taken with graphene-like hexagonal structure. The Au, Ag, and Pt bilayers stabilize in AA-stacked configuration, while the Cu bilayer favors the AB stacking pattern. The quantum ballistic conductance of the noble-metal mono- and bilayers is remarkably increased compared with their bulk counterparts. Among the studied systems, the tensile strength is found to be highest for the Pt monolayer and bilayer. The noble metals in mono- and bilayer form show distinctly different electron energy loss spectra and reflectance spectra due to the quantum confinement effect on going from bulk to the monolayer limit. Such tunability of the electronic and dielectric properties of noble metals by reducing the degrees of freedom of electrons offers promise for their use in nanoelectronics and optoelectronics applications. ? 2016, The Minerals, Metals & Materials Society.