Department Of Physics

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Author: search.filters.author.Pandey, RavindraSubject: search.filters.subject.DFT

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    Optoelectronic and photocatalytic properties of stable pentagonal B2S and B2Se monolayers
    (Elsevier B.V., 2022-06-01T00:00:00) Katoch, Neha; Kumar, Jagdish; Kumar, Ashok; Ahluwalia, P.K.; Pandey, Ravindra
    Boron-based 2D monolayers have attracted tremendous interest due to their unique physical and chemical properties. In this paper, we report novel pentagonal monolayers, B2S and B2Se, which are predicted to be energetically, dynamically, and thermally stable based on density functional theory. At the HSE06 level of theory, they exhibit a moderate indirect bandgap of (e.g., 1.82 eV for Penta-B2S and 1.94 eV for Penta-B2Se). Strain-induced indirect-to-direct bandgap transition, high hole mobility (~103 Cm2V-1S-1) and strong optical absorption (? ~105 Cm-1) in the visible region are observed for these monolayers. Moreover, the electronic band structures and optical spectra are tunable by mechanical strains suggesting their visible light-harvesting capabilities for optoelectronic applications. In this way, the pentagonal family of 2D materials is now expanded to include boron-containing photocatalytic materials for water splitting applications. � 2022
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    Electronic and optical properties of boron-based hybrid monolayers
    (IOP Publishing Ltd, 2021-06-24T00:00:00) Katoch, Neha; Kumar, Ashok; Kumar, Jagdish; Ahluwalia, P.K.; Pandey, Ravindra
    Anisotropic 2D Dirac cone materials are important for the fabrication of nanodevices having direction-dependent characteristics since the anisotropic Dirac cones lead to different values of Fermi velocities yielding variable carrier concentrations. In this work, the feasibility of the B-based hybrid monolayers BX (X = As, Sb, and Bi), as anisotropic Dirac cone materials is investigated. Calculations based on density functional theory and molecular dynamics method find the stability of these monolayers exhibiting unique electronic properties. For example, the BAs monolayer possesses a robust self-doping feature, whereas the BSb monolayer carries the intrinsic charge carrier concentration of the order of 1012 cm?2 which is comparable to that of graphene. Moreover, the direction-dependent optical response is predicted in these B-based monolayers; a high IR response in the x-direction is accompanied with that in the visible region along the y-direction. The results are, therefore, expected to help in realizing the B-based devices for nanoscale applications. � 2021 IOP Publishing Ltd Printed in the UK
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    Topological insulator behavior of WS 2 monolayer with square-octagon ring structure
    (American Institute of Physics Inc., 2016) Kumar, Ashok; Pandey, Ravindra; Ahluwalia, P. K.; Tankeshwar, K.
    We report electronic behavior of an allotrope of monolayer WS 2 with a square octagon ring structure, refereed to as (so-WS 2 ) within state-of-the-art density functional theory (DFT) calculations. The WS 2 monolayer shows semi-metallic characteristics with Dirac-cone like features around Cyrillic capital letter GHE. Unlike p-orbital's Dirac-cone in graphene, the Dirac-cone in the so-WS 2 monolayer originates from the d-electrons of the W atom in the lattice. Most interestingly, the spin-orbit interaction associated with d-electrons induce a finite band-gap that results into the metal-semiconductor transition and topological insulator-like behavior in the so-WS 2 monolayer. These characteristics suggest the so-WS 2 monolayer to be a promising candidate for the next-generation electronic and spintronics devices.
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    Energetics and Electronic Properties of Pt Wires of Different Topologies on Monolayer MoSe 2
    (AIP Publishing, 2016) Jamdagni, Pooja; Kumar, Ashok; Thakur, Anil; Pandey, Ravindra; Ahluwalia, P. K.
    The energetics and electronic properties of different of Pt wires including linear, zigzag and ladder structures on MoSe2 have been investigated in the framework of The predicted order of stability of Pt wire on MoSe2 is found to be: linear > ladder > zigzag. Pt wires induce states near the of MoSe2 that results into metallic characteristics of Pt-wire/MoSe2 assembled system. signifies most of the contribution from Pt atoms near the Fermi energy of assembled wire/MoSe2 system. These findings are expected to be important for the of based on MoSe2 layers for flexible nanoelectronics.