School Of Basic And Applied Sciences

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    Rationally designed state-of-the-art approach for enhancing the ultraviolet photon detection performance of ZnO thin film
    (Elsevier B.V., 2022-10-07T00:00:00) Kaawash, Nabeel M.S.; Halge, Devidas I.; Narwade, Vijaykiran N.; Alegaonkar, Prashant S.; Bogle, Kashinath A.
    Here, we demonstrate a simple and effective state-of-the-art (surface passivation) approach for enhancing the UV photo detection performance of ZnO thin films synthesized via spray pyrolysis. The surface passivated Ag/ZnO/Ag device (using polyvinyl alcohol layer) has low dark current of 1.1 nA as compared with the device without surface passivation (0.04 ?A). The significant decay in the dark current after surface passivation is due the reduction in the density of surface oxygen vacancies confirmed by PL measurements. The UV photon detection capability of the surface passivated ZnO thin film exhibits a significantly high photo response (3675), high photosensitivity (3.6 � 105), photo-responsivity (0.6 A/W) and fast response time (0.6 ms) under UV light (340 nm, 140 ?W/cm2). This straightforward approach superimposes surface defects, making the ZnO thin film more suitable for a wide range of electronic device applications while preserving the material's intrinsic properties. � 2022 Elsevier B.V.
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    Highly stable and sensitive photon detection performance of ZnO thin film for ultraviolet light
    (Elsevier B.V., 2022-04-14T00:00:00) Kaawash, Nabeel M.S.; Kejriwal, Nubbh; Halge, Devidas I.; Narwade, Vijaykiran N.; Rana, Abhimanyu S.; Dadge, Jagdish W.; Jejurikar, Suhas M.; Alegaonkar, Prashant S.; Bogle, Kashinath A.
    The photo detection characteristics of spray pyrolysis deposited ZnO thin film on glass substrate at 250 OC was demonstrated for fabrication of highly stable visible-blind UV photodetector. This photodetector exhibits lower dark current < 0.04 ?A, higher UV photosensitivity ?4750, responsivity of 0.14 A/W and detectivity of 1.24 � 1012 Jones at an average intensity of 140 ?W/cm2 of 340 nm. This Ag/ZnO/Ag device show excellent photo response (rise and decay) time of ?4 and 6 ms with external quantum efficiency of 51%. The observed photocurrent in the device is associated with adsorption and light-induced desorption of oxygen from the defect sites on the film surfaces. The adsorbed oxygen removes the electron trap centers and increasing the free carrier density in ZnO. � 2022 Elsevier B.V.