School Of Basic And Applied Sciences
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Item First principles study of 2D ring-Te and its electrical contact with a topological Dirac semimetal(Royal Society of Chemistry, 2023-02-10T00:00:00) Singh, Jaspreet; Kumar, AshokIn recent years, researchers have manifested their interest in two-dimensional (2D) mono-elemental materials of group-VI elements because of their excellent optoelectronic, photovoltaic and thermoelectric properties. Despite the intensive recent research efforts, there is still a possibility of novel 2D allotropes of these elements due to their multivalency nature. Here, we have predicted a novel 2D allotrope of tellurium (ring-Te) using density functional theory. Its stability is confirmed by phonon and ab initio molecular dynamics simulations. Ring-Te has an indirect band gap of 0.69 eV (1.16 eV) at the PBE (HSE06) level of theories and undergoes an indirect-direct band gap transition under tensile strain. The higher carrier mobility of holes (?103 cm2 V?1 s?1), good UV-visible light absorption ability and low exciton binding (?0.35 eV) of ring-Te give rise to its potential applications in optoelectronic devices. Furthermore, the electrical contact of ring-Te with a topological Dirac semimetal (sq-Te) under the influence of an electric field shows that the Schottky barriers and contact types can undergo transition from p-type to n-type Schottky contact and then to ohmic contact at a higher electric field. Our study provides an insight into the physics of designing high-performance electrical coupled devices composed of 2D semiconductors and topological semimetals. � 2023 The Royal Society of Chemistry.Item Mechanical, optical and thermoelectric properties of Janus BiTeCl monolayer(Elsevier Ltd, 2022-04-29T00:00:00) Chauhan, Poonam; Singh, Jaspreet; Kumar, AshokWe report mechanical, optical and thermoelectric properties of recently fabricated Janus BiTeCl monolayer using density functional and semi-classical Boltzmann transport theory. Janus BiTeCl monolayer exhibits a direct bandgap, high carrier mobility (?103 cm2V?1s?1) and high optical absorption in the UV�visible region. The mechanical behavior of the Janus BiTeCl monolayer is nearly isotropic having an ideal tensile strength ?15 GPa. The higher value of the Gruneisen parameter (?), a low value of phonon group velocity (vg), and very little phonon scattering time (?p) lead to low lattice thermal conductivity (1.46 W/mK) of Janus BiTeCl monolayer. The combined effect of thermal conductivity and electronic transport coefficients of Janus BiTeCl monolayer results in the figure of merit (ZT) in the range of 0.43�0.75 at 300�500 K. Our results suggest Janus BiTeCl monolayer be a potential candidate for optoelectronic and moderate temperature thermoelectric applications. � 2022Item Structural, dielectric and ferroelectric properties of Cu2+- and Cu2+/Bi3+-doped BCZT lead-free ceramics: a comparative study(Springer, 2021-05-29T00:00:00) Kumari, Sapna; Kumar, Amit; Kumar, V.; Dubey, S.K.; Goyal, P.K.; Kumar, Suresh; Sharma, A.L.; Arya, AnilPerovskite-type Ba0.98Ca0.02Zr0.02Ti0.98O3 (BCZT), Ba0.98Ca0.02Zr0.02Ti0.976Cu0.008O3 (BCZTC) and Ba0.9725Bi0.005Ca0.02Zr0.02Ti0.976Cu0.008O3 (BCZTCB) lead-free ceramics were synthesised via solid-state reaction method at a sintering temperature of 1380��C. Effects of CuO and Bi2O3/CuO doping on structural, microstructural, dielectric and ferroelectric properties were investigated systematically. X-ray diffraction technique confirmed the existence of pure perovskite phase with the tetragonal structure in pure and in the doped BCZT ceramics at room temperature. The dielectric analysis demonstrated two anomalies around 24��C and 126��C for BCZT, which were identified as orthorhombic to tetragonal (TO-T) and tetragonal to cubic (TC) phase transition temperature, respectively. The TO-T temperature shifted to below 16��C, while the TC increased to 132��C for the BCZTCB sample. The physical mechanisms of the conduction processes were investigated through impedance spectroscopy, and the values of resistance, conductivity and activation energies associated with the grain and grain boundaries were evaluated. The activation energy was determined to be higher for doped samples than for pure BCZT. Further, the dopant-dependent ferroelectric nature of the ceramic samples was evidenced by the analysis of characteristic hysteresis loop, and a value of remnant polarization (Pr = 4.59�?C/cm2) was obtained for the BCZTCB ceramic sample. Furthermore, the d33 value, which was 54 pC/N for pure BCZT, was determined to be 140 pC/N and 64 pC/N for BCZTC and BCZTCB, respectively. � 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.