Stability and carrier transport properties of phosphorene-based polymorphic nanoribbons

dc.contributor.authorKaur, Sumandeep
dc.contributor.authorKumar, Ashok
dc.contributor.authorSrivastava, Sunita
dc.contributor.authorPandey, Ravindra
dc.contributor.authorTankeshwar, K.
dc.date.accessioned2018-07-14T01:19:13Z
dc.date.accessioned2024-08-13T12:45:57Z
dc.date.available2018-07-14T01:19:13Z
dc.date.available2024-08-13T12:45:57Z
dc.date.issued2018
dc.description.abstractFew-layer black phosphorene has recently attracted significant interest in the scientific community. In this paper, we consider several polymorphs of phosphorene nanoribbons (PNRs) and employ deformation potential theory within the effective mass approximation, together with density functional theory, to investigate their structural, mechanical and electronic properties. The results show that the stability of a PNR strongly depends on the direction along which it can be cut from its 2D counterpart. PNRs also exhibit a wide range of line stiffnesses ranging from 6 ?1010 eV m-1 to 18 ?1011 eV m-1, which has little dependence on the edge passivation. Likewise, the calculated electronic properties of PNRs show them to be either a narrow-gap semiconductor (E g < 1 eV) or a wide-gap semiconductor (E g > 1 eV). The carrier mobility of PNRs is found to be comparable to that of black phosphorene. Some of the PNRs show an n-type (p-type) semiconducting character owing to their higher electron (hole) mobility. Passivation of the edges leads to n-type ? p-type transition in many of the PNRs considered. The predicted novel characteristics of PNRs, with a wide range of mechanical and electronic properties, make them potentially suitable for use in nanoscale devices. ? 2018 IOP Publishing Ltd.en_US
dc.identifier.citationKaur, S., Kumar, A., Srivastava, S., Pandey, R., & Tankeshwar, K. (2018). Stability and carrier transport properties of phosphorene-based polymorphic nanoribbons. Nanotechnology, 29(15). doi: 10.1088/1361-6528/aaac43en_US
dc.identifier.doi10.1088/1361-6528/aaac43
dc.identifier.issn9574484
dc.identifier.urihttps://kr.cup.edu.in/handle/32116/1477
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-6528/aaac43/meta
dc.language.isoen_USen_US
dc.publisherInstitute of Physics Publishingen_US
dc.subjectCarrier mobilityen_US
dc.subjectElectronic propertiesen_US
dc.subjectHole mobilityen_US
dc.subjectNanoribbonsen_US
dc.subjectNarrow band gap semiconductorsen_US
dc.subjectPassivationen_US
dc.subjectPolymorphismen_US
dc.subjectWide band gap semiconductorsen_US
dc.subjectDeformation potential theoryen_US
dc.subjectEffective mass approximationen_US
dc.subjectMechanical and electronic propertiesen_US
dc.subjectNanoscale deviceen_US
dc.subjectNarrow-gap semiconductorsen_US
dc.subjectphosphoreneen_US
dc.subjectScientific communityen_US
dc.subjectWide-gap semiconductoren_US
dc.subjectDensity functional theoryen_US
dc.titleStability and carrier transport properties of phosphorene-based polymorphic nanoribbonsen_US
dc.title.journalNanotechnology
dc.typeArticleen_US

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