Tellurium nanostructures for optoelectronic applications

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dc.contributor.authorRani, Pinki
dc.contributor.authorAlegaonkar, Ashwini P.
dc.contributor.authorMahapatra, Santosh K.
dc.contributor.authorAlegaonkar, Prashant S.
dc.date.accessioned2024-01-21T10:42:40Z
dc.date.accessioned2024-08-13T12:44:42Z
dc.date.available2024-01-21T10:42:40Z
dc.date.available2024-08-13T12:44:42Z
dc.date.issued2022-03-29T00:00:00
dc.description.abstractWe report on fabrication of tellurium nanostructures (TN) that demonstrated promising applications in optoelectronics. Initially, TN were synthesized using a simple, one-step, room temperature, wet-chemical technique. During synthesis, the effect of number of parameters such as precursor concentration, its content, solvent ratios, their pH and reaction time has been investigated at a temperature ~ 120��C. The obtained product was examined by UV�visible, IR spectroscopy, X-ray diffractometry, electron microscopy and energy-dispersive X-ray spectroscopic characterization techniques. Analysis revealed that TN have profound impact on the structure�property relationship through active and passive participation of Mo catalyst. During its initial growth stages, Te and O bonding gets influenced by Mo to form Mo�O�Te�O and Te�Mo�Te moieties, typically, at 6�h. This has implication onto the structural phase transformation of TN from Te-tube (TT) to Te-flake (TF) and then to TT again. Possible transformation mechanism is explained. Structurally, TN had hexagonal quasi-crystalline atomic arrangement with morphologically thin, transparent, bunched and close-caped TT characteristics having diameter 50�100�nm and length 0.8�2.1��m, whereas TF is found to be thin, geometrically squared with area ~ 7 to 10 �m2. On their implementation for optoelectronic assessments, over the wavelength range 0.3�2.1��m (power density ~ 100 mW/cm2), they showed peculiar luminescent and dark I�V responses. Relevant photocarrier dynamics has been revealed. TT, typically, showed 160% quantum efficiency, whereas TF ~ 40% is useful for optoelectronic devices. Details are presented. Graphical abstract: Fabrication and optoelectronic assessments of tellurium nanostructure that showed time-dependent structural phase transformation from tube to flake to tube. [Figure not available: see fulltext.] � 2022, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.en_US
dc.identifier.doi10.1007/s00339-022-05405-3
dc.identifier.issn9478396
dc.identifier.urihttp://10.2.3.109/handle/32116/3707
dc.identifier.urlhttps://link.springer.com/10.1007/s00339-022-05405-3
dc.language.isoen_USen_US
dc.publisherSpringer Science and Business Media Deutschland GmbHen_US
dc.subjectNanotubes and nanoflake photoconductivityen_US
dc.subjectPhase transitionen_US
dc.subjectTelluriumen_US
dc.titleTellurium nanostructures for optoelectronic applicationsen_US
dc.title.journalApplied Physics A: Materials Science and Processingen_US
dc.typeArticleen_US
dc.type.accesstypeClosed Accessen_US

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