Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN
dc.contributor.author | Guo, Qing | |
dc.contributor.author | Wang, Gaoxue | |
dc.contributor.author | Kumar, Ashok | |
dc.contributor.author | Pandey, Ravindra | |
dc.date.accessioned | 2018-07-14T01:19:13Z | |
dc.date.accessioned | 2024-08-13T12:45:58Z | |
dc.date.available | 2018-07-14T01:19:13Z | |
dc.date.available | 2024-08-13T12:45:58Z | |
dc.date.issued | 2017 | |
dc.description.abstract | Van der Waals structures based on two-dimensional materials have been considered as promising structures for novel nanoscale electronic devices. Two-dimensional SnO films which display intrinsic p-type semiconducting properties were fabricated recently. In this paper, we consider vertically stacked heterostructures consisting of a SnO monolayer with graphene or a BN monolayer to investigate their stability, electronic and transport properties using density functional theory. The calculated results find that the properties of the constituent monolayers are retained in these SnO-based heterostructures, and a p-type Schottky barrier is formed in the SnO/graphene heterostructure. Additionally, the Schottky barrier can be effectively controlled with an external electric field, which is useful characteristic for the van der Waals heterostructure-based electronic devices. In the SnO/BN heterostructure, the electronic properties of SnO are least affected by the insulating monolayer suggesting that the BN monolayer would be an ideal substrate for SnO-based nanoscale devices. ? 2017 IOP Publishing Ltd. | en_US |
dc.identifier.citation | Guo, Q., Wang, G., Kumar, A., & Pandey, R. (2017). Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN. Nanotechnology, 28(47). doi: 10.1088/1361-6528/aa92ab | en_US |
dc.identifier.doi | 10.1088/1361-6528/aa92ab | |
dc.identifier.issn | 9574484 | |
dc.identifier.uri | https://kr.cup.edu.in/handle/32116/1478 | |
dc.identifier.url | http://iopscience.iop.org/article/10.1088/1361-6528/aa92ab/meta | |
dc.language.iso | en_US | en_US |
dc.publisher | Institute of Physics Publishing | en_US |
dc.subject | Density functional theory | en_US |
dc.subject | Electric fields | en_US |
dc.subject | Electronic equipment | en_US |
dc.subject | Electronic properties | en_US |
dc.subject | Graphene | en_US |
dc.subject | Heterojunctions | en_US |
dc.subject | Monolayers | en_US |
dc.subject | Nanotechnology | en_US |
dc.subject | Schottky barrier diodes | en_US |
dc.subject | Semiconducting films | en_US |
dc.subject | Substrates | en_US |
dc.subject | Thermoelectric equipment | en_US |
dc.subject | Van der Waals forces | en_US |
dc.subject | Electronic device | en_US |
dc.subject | External electric field | en_US |
dc.subject | Nanoscale electronic devices | en_US |
dc.subject | Schottky barriers | en_US |
dc.subject | Semi-conducting property | en_US |
dc.subject | Tin monoxides | en_US |
dc.subject | Two-dimensional materials | en_US |
dc.subject | Van der waals | en_US |
dc.subject | Tin compounds | en_US |
dc.title | Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN | en_US |
dc.title.journal | Nanotechnology | |
dc.type | Article | en_US |
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