Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN

dc.contributor.authorGuo, Qing
dc.contributor.authorWang, Gaoxue
dc.contributor.authorKumar, Ashok
dc.contributor.authorPandey, Ravindra
dc.date.accessioned2018-07-14T01:19:13Z
dc.date.accessioned2024-08-13T12:45:58Z
dc.date.available2018-07-14T01:19:13Z
dc.date.available2024-08-13T12:45:58Z
dc.date.issued2017
dc.description.abstractVan der Waals structures based on two-dimensional materials have been considered as promising structures for novel nanoscale electronic devices. Two-dimensional SnO films which display intrinsic p-type semiconducting properties were fabricated recently. In this paper, we consider vertically stacked heterostructures consisting of a SnO monolayer with graphene or a BN monolayer to investigate their stability, electronic and transport properties using density functional theory. The calculated results find that the properties of the constituent monolayers are retained in these SnO-based heterostructures, and a p-type Schottky barrier is formed in the SnO/graphene heterostructure. Additionally, the Schottky barrier can be effectively controlled with an external electric field, which is useful characteristic for the van der Waals heterostructure-based electronic devices. In the SnO/BN heterostructure, the electronic properties of SnO are least affected by the insulating monolayer suggesting that the BN monolayer would be an ideal substrate for SnO-based nanoscale devices. ? 2017 IOP Publishing Ltd.en_US
dc.identifier.citationGuo, Q., Wang, G., Kumar, A., & Pandey, R. (2017). Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN. Nanotechnology, 28(47). doi: 10.1088/1361-6528/aa92aben_US
dc.identifier.doi10.1088/1361-6528/aa92ab
dc.identifier.issn9574484
dc.identifier.urihttps://kr.cup.edu.in/handle/32116/1478
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/1361-6528/aa92ab/meta
dc.language.isoen_USen_US
dc.publisherInstitute of Physics Publishingen_US
dc.subjectDensity functional theoryen_US
dc.subjectElectric fieldsen_US
dc.subjectElectronic equipmenten_US
dc.subjectElectronic propertiesen_US
dc.subjectGrapheneen_US
dc.subjectHeterojunctionsen_US
dc.subjectMonolayersen_US
dc.subjectNanotechnologyen_US
dc.subjectSchottky barrier diodesen_US
dc.subjectSemiconducting filmsen_US
dc.subjectSubstratesen_US
dc.subjectThermoelectric equipmenten_US
dc.subjectVan der Waals forcesen_US
dc.subjectElectronic deviceen_US
dc.subjectExternal electric fielden_US
dc.subjectNanoscale electronic devicesen_US
dc.subjectSchottky barriersen_US
dc.subjectSemi-conducting propertyen_US
dc.subjectTin monoxidesen_US
dc.subjectTwo-dimensional materialsen_US
dc.subjectVan der waalsen_US
dc.subjectTin compoundsen_US
dc.titleStability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BNen_US
dc.title.journalNanotechnology
dc.typeArticleen_US

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