Pressure and electric field tuning of Schottky contacts in PdSe2/ZT-MoSe2 van der Waals heterostructure

dc.contributor.authorJakhar M.
dc.contributor.authorSingh J.
dc.contributor.authorKumar A.
dc.contributor.authorTankeshwar K.
dc.date.accessioned2020-02-18T10:06:30Z
dc.date.accessioned2024-08-13T12:44:22Z
dc.date.available2020-02-18T10:06:30Z
dc.date.available2024-08-13T12:44:22Z
dc.date.issued2020
dc.description.abstractA two-dimensional van der Waals (vdW) heterostructure (PdSe2/ZT-MoSe2) has been investigated through vdW corrected density functional theory. ZT-MoSe2 acts as a Dirac material with an anisotropic Dirac cone and variable Fermi velocity (0.52-1.91×נ105 ms-1). The intrinsic Schottky barrier height can be effectively tuned by applying external pressure and an electric field to the heterostructure. The p-type Schottky barrier transforms into a p-type ohmic contact at pressure P≈16 GPa. A positive electric field induces p-type ohmic contact while a negative electric field results in the transition from p-type Schottky contact to n-type Schottky contact, and finally to n-type ohmic contact at the higher values of the field. Moreover, the external positive (negative) electric field induces n-type (p-type) doping of ZT-MoSe2 in the heterostructure and remarkably controls the charge carrier concentration. Our results demonstrate that controlling the external pressure and electric field in a PdSe2/ZT-MoSe2 heterostructure can result in an unprecedented opportunity for the design of high-performance nanodevices.en_US
dc.identifier.doi10.1088/1361-6528/ab5de1
dc.identifier.issn13616528
dc.identifier.urihttps://kr.cup.edu.in/handle/32116/2588
dc.identifier.urlhttps://iopscience.iop.org/article/10.1088/1361-6528/ab5de1/meta
dc.language.isoenen_US
dc.publisherNLM (Medline)en_US
dc.titlePressure and electric field tuning of Schottky contacts in PdSe2/ZT-MoSe2 van der Waals heterostructureen_US
dc.title.journalNanotechnologyen_US
dc.typeArticleen_US
dc.type.accesstypeClosed Accessen_US

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