Pressure and electric field tuning of Schottky contacts in PdSe2/ZT-MoSe2 van der Waals heterostructure
dc.contributor.author | Jakhar M. | |
dc.contributor.author | Singh J. | |
dc.contributor.author | Kumar A. | |
dc.contributor.author | Tankeshwar K. | |
dc.date.accessioned | 2020-02-18T10:06:30Z | |
dc.date.accessioned | 2024-08-13T12:44:22Z | |
dc.date.available | 2020-02-18T10:06:30Z | |
dc.date.available | 2024-08-13T12:44:22Z | |
dc.date.issued | 2020 | |
dc.description.abstract | A two-dimensional van der Waals (vdW) heterostructure (PdSe2/ZT-MoSe2) has been investigated through vdW corrected density functional theory. ZT-MoSe2 acts as a Dirac material with an anisotropic Dirac cone and variable Fermi velocity (0.52-1.91×נ105 ms-1). The intrinsic Schottky barrier height can be effectively tuned by applying external pressure and an electric field to the heterostructure. The p-type Schottky barrier transforms into a p-type ohmic contact at pressure P≈16 GPa. A positive electric field induces p-type ohmic contact while a negative electric field results in the transition from p-type Schottky contact to n-type Schottky contact, and finally to n-type ohmic contact at the higher values of the field. Moreover, the external positive (negative) electric field induces n-type (p-type) doping of ZT-MoSe2 in the heterostructure and remarkably controls the charge carrier concentration. Our results demonstrate that controlling the external pressure and electric field in a PdSe2/ZT-MoSe2 heterostructure can result in an unprecedented opportunity for the design of high-performance nanodevices. | en_US |
dc.identifier.doi | 10.1088/1361-6528/ab5de1 | |
dc.identifier.issn | 13616528 | |
dc.identifier.uri | https://kr.cup.edu.in/handle/32116/2588 | |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/1361-6528/ab5de1/meta | |
dc.language.iso | en | en_US |
dc.publisher | NLM (Medline) | en_US |
dc.title | Pressure and electric field tuning of Schottky contacts in PdSe2/ZT-MoSe2 van der Waals heterostructure | en_US |
dc.title.journal | Nanotechnology | en_US |
dc.type | Article | en_US |
dc.type.accesstype | Closed Access | en_US |