Topological insulator behavior of WS 2 monolayer with square-octagon ring structure

dc.contributor.authorKumar, Ashok
dc.contributor.authorPandey, Ravindra
dc.contributor.authorAhluwalia, P. K.
dc.contributor.authorTankeshwar, K.
dc.date.accessioned2019-03-22T09:11:05Z
dc.date.accessioned2024-08-13T12:46:14Z
dc.date.available2019-03-22T09:11:05Z
dc.date.available2024-08-13T12:46:14Z
dc.date.issued2016
dc.description.abstractWe report electronic behavior of an allotrope of monolayer WS 2 with a square octagon ring structure, refereed to as (so-WS 2 ) within state-of-the-art density functional theory (DFT) calculations. The WS 2 monolayer shows semi-metallic characteristics with Dirac-cone like features around Cyrillic capital letter GHE. Unlike p-orbital's Dirac-cone in graphene, the Dirac-cone in the so-WS 2 monolayer originates from the d-electrons of the W atom in the lattice. Most interestingly, the spin-orbit interaction associated with d-electrons induce a finite band-gap that results into the metal-semiconductor transition and topological insulator-like behavior in the so-WS 2 monolayer. These characteristics suggest the so-WS 2 monolayer to be a promising candidate for the next-generation electronic and spintronics devices.en_US
dc.identifier.citationKumar A., Pandey R., Ahluwalia P.K. et.al. (2016) Topological insulator behavior of WS 2 monolayer with square-octagon ring structureen_US
dc.identifier.doi10.1063/1.4948215
dc.identifier.isbn9.78E+12
dc.identifier.issn0094243X
dc.identifier.urihttps://kr.cup.edu.in/handle/32116/2070
dc.identifier.urlhttps://aip.scitation.org/doi/abs/10.1063/1.4948215
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.subjectDFTen_US
dc.subjectElectronic Structureen_US
dc.subjectMonolayeren_US
dc.subjectTMDsen_US
dc.subjectTopological Insulatoren_US
dc.titleTopological insulator behavior of WS 2 monolayer with square-octagon ring structureen_US
dc.title.journalAIP Conference Proceedings
dc.typeConference Paperen_US

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