Guo, QingWang, GaoxueKumar, AshokPandey, Ravindra2018-07-142024-08-132018-07-142024-08-132017Guo, Q., Wang, G., Kumar, A., & Pandey, R. (2017). Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN. Nanotechnology, 28(47). doi: 10.1088/1361-6528/aa92ab957448410.1088/1361-6528/aa92abhttps://kr.cup.edu.in/handle/32116/1478Van der Waals structures based on two-dimensional materials have been considered as promising structures for novel nanoscale electronic devices. Two-dimensional SnO films which display intrinsic p-type semiconducting properties were fabricated recently. In this paper, we consider vertically stacked heterostructures consisting of a SnO monolayer with graphene or a BN monolayer to investigate their stability, electronic and transport properties using density functional theory. The calculated results find that the properties of the constituent monolayers are retained in these SnO-based heterostructures, and a p-type Schottky barrier is formed in the SnO/graphene heterostructure. Additionally, the Schottky barrier can be effectively controlled with an external electric field, which is useful characteristic for the van der Waals heterostructure-based electronic devices. In the SnO/BN heterostructure, the electronic properties of SnO are least affected by the insulating monolayer suggesting that the BN monolayer would be an ideal substrate for SnO-based nanoscale devices. ? 2017 IOP Publishing Ltd.en-USDensity functional theoryElectric fieldsElectronic equipmentElectronic propertiesGrapheneHeterojunctionsMonolayersNanotechnologySchottky barrier diodesSemiconducting filmsSubstratesThermoelectric equipmentVan der Waals forcesElectronic deviceExternal electric fieldNanoscale electronic devicesSchottky barriersSemi-conducting propertyTin monoxidesTwo-dimensional materialsVan der waalsTin compoundsArticlehttp://iopscience.iop.org/article/10.1088/1361-6528/aa92ab/meta