Banda, Rajender ReddyHalge, Devidas I.Narwade, Vijaykiran N.Kaawash, Nabeel M.S.Thabit, Mohammed Y.H.Alegaonkar, Prashant S.Bogle, Kashinath A.2024-01-212024-08-132024-01-212024-08-132023-05-08921452610.1016/j.physb.2023.414938https://kr.cup.edu.in/handle/32116/3764Currently, polarization-dependent transport in ferroelectric materials under optical illumination is gaining a lot of attention in optoelectronics. This idea is implemented on BiFeO3 to illustrate its UV�Visible light photodetection property, however, naturally occurring bismuth or oxygen vacancies serve a major disadvantage as they interfere with its polarization ability. It is very difficult to overcome this defect issue in bismuth-based perovskites, therefore, based on this herein an enhancement in the photoconductive property of polycrystalline BiFeO3 thin film deposited via spray pyrolysis technique on Sn:In2O3 coated glass substrate is demonstrated without polarizing it. An extraordinary photodetection behavior with higher photoresponsivity (1.01 A/W) and external quantum efficiency (364) as well as faster response speed (6 ms) even under low UV illumination (340 nm) and lower applied bias of 2 V is observed. The roles of the BiFeO3�Sn:In2O3 interface, as well as the adsorption/desorption of oxygen molecules on the surface of BiFeO3 layers, were highlighted for the ferroelectric material's UV photodetector application. � 2023 Elsevier B.V.en-USBiFeO₃Chemisorptionsp-n junctionPhotodetectorPolarization-independentArticlehttps://linkinghub.elsevier.com/retrieve/pii/S0921452623003058