Jamdagni, PoojaKumar, AshokThakur, AnilPandey, RavindraAhluwalia, P. K.2017-08-092024-08-132017-08-092024-08-132017Tunnelling Characterstics of Stone-Wales Defects in Monolayers of Sn and Group-V Elements” Pooja Jamdagni, Ashok Kumar, Anil Thakur, Ravindra Pandey, P. K. Ahluwalia Journal of Physics:Condensed Matter (Accepted) DOI: 10.1088/1361-648X/aa7dd1Online- 1361-648XPrint- 0953-898410.1088/1361-648X/aa7dd1http://10.2.3.109/handle/32116/311Topological defects in ultrathin layers are often formed during synthesis and processing, thereby, strongly influencing the electronic properties of the layered systems. For the monolayers of Sn and group-V elements, we report the results based on density functional theory determining the role of Stone-Wales (SW) defects in modifying their electronic properties. The calculated results find the electronic properties of Sn monolayer to be strongly dependent on the concentration of SW-defects e.g., defective stanene has nearly zero band gap (≈ 0.03 eV) for the defect concentration of 2.2 x 10<sup>13</sup> cm<sup>-2</sup> which opens up to 0.2 eV for the defect concentration of 3.7 x 10<sup>13</sup> cm<sup>-2</sup>. In contrast, SW-defects appear to induce conduction states in the semiconducting monolayers of group-V elements. These conduction states act as channels for electron tunnelling, and the calculated tunnelling characteristics show the highest differential conductance for the negative bias with the asymmetric current-voltage characteristics. On the other hand, the highest differential conductance was found for the positive bias in stanene. Simulated STM topographical images of stanene and group-V monolayers show distinctly different features in terms of their cross-sectional views and distance-height profiles. These distinctive features can serve as fingerprints to identify the topological defects in experiments for the monolayers of group-IV and group-V elements.enArticlehttp://iopscience.iop.org/article/10.1088/1361-648X/aa7dd1/meta